Nanomechanical measurement of magnetostriction and magnetic anisotropy in (Ga,Mn)As.

نویسندگان

  • S C Masmanidis
  • H X Tang
  • E B Myers
  • Mo Li
  • K De Greve
  • G Vermeulen
  • W Van Roy
  • M L Roukes
چکیده

A GaMnAs nanoelectromechanical resonator is used to obtain the first measurement of magnetostriction in a dilute magnetic semiconductor. Resonance frequency shifts induced by field-dependent magnetoelastic stress are used to simultaneously map the magnetostriction and magnetic anisotropy constants over a wide range of temperatures. Owing to the central role of carriers in controlling ferromagnetic interactions in this material, the results appear to provide insight into a unique form of magnetoelastic behavior mediated by holes.

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عنوان ژورنال:
  • Physical review letters

دوره 95 18  شماره 

صفحات  -

تاریخ انتشار 2005